STP4435A p channel enhanc ement mode mosfet - 10a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. description STP4435A is the p-channel logic enhancemen t mode power field effect transistor which is produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application such as lcd backlight, notebook computer power management, and other battery powered circuits. feature z -30v/-9.2a, r ds(on) = 22m (typ.) @v gs =-10v z -30v/-7.0a, r ds(on) = 30m @v gs = -4.5v z super high density cell design for extremely low r ds(on) z exceptional on-resistance and maximum dc current capability z sop-8 package design pin configuration sop-8 part marking sop-8 STP4435A 2007. v1
STP4435A p channel enhanc ement mode mosfet - 10a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STP4435A 2007. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain-source voltage v dss -30 v gate-source voltage v gss 20 v continuous drain current (tj=150 ) t a =25 t a =70 i d -10.0 -7.0 a pulsed drain current i dm -50 a continuous source current (diode conduction) i s -2.3 a power dissipation t a =25 t a =70 p d 2.8 1.8 w operation junction temperature t j -55/150 storgae temperature range t stg -55/150 thermal resistance-j unction to ambient r ja 70 /w
STP4435A p channel enhanc ement mode mosfet - 10a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STP4435A 2007. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =-250ua -30 v gate threshold voltage v gs(th) v ds =v gs ,i d =-250 ua -1.0 -3.0 v gate leakage current i gss v ds =0v,v gs = 20v 100 na v ds =-30v,v gs =0v -1 zero gate voltage drain current i dss t j =55 v ds =-30v,v gs =0v -5 ua on-state drain current i d(on) v ds=- 5v,v gs =10v -40 a drain-source on-resistance r ds(on) v gs =-10v, i d =-9.2a v gs =-4.5v, i d =-7.0 0.022 0.030 forward tran conductance g fs v ds =-10v,i d =-9.0a 24 s diode forward voltage v sd i s =-2.0a,v gs =0v -0.8 -1.2 v dynamic total gate charge q g 16 24 gate-source charge q gs 2.3 gate-drain charge q gd v ds =-15v,v gs =-10v i d ? -9.a 4.5 nc input capacitance ciss 1650 output capacitance coss 350 reverse transfercapacitance crss v ds =-15v,vgs=0v f=1mhz 235 pf 16 30 turn-on time t d(on) tr 17 30 65 110 turn-off time t d(off) tf v dd =15v,r l =15 i d =-1.0a,v gen =-10v r g =6 35 80 ns
STP4435A p channel enhanc ement mode mosfe t - 10a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. typical characterictics (25 unless note) STP4435A 2007. v1
STP4435A p channel enhanc ement mode mosfet - 10a stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. typical characterictics (25 unless note) STP4435A 2007. v1
STP4435A p channel enhanc ement mode mosfet - 10a sop-8 package outline stanson technology 120 bentley square, mount ain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. STP4435A 2007. v1
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